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| H5N2305PF Silicon N Channel MOS FET High Speed Power Switching REJ03G0026-0200Z Rev.2.00 Jun.25.2004 Features * Low on-resistance * Low leakage current * High speed switching Outline TO-3PFM D G 1 S 1. Gate 2. Drain 3. Source 2 3 Rev.2.00, Jun.25.2004, page 1 of 9 H5N2305PF Absolute Maximum Rating (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Symbol VDSS VGSS ID ID (pulse)Note1 IDR IDR (pulse)Note1 230 30 35 140 35 140 18 60 2.08 150 -55 to +150 Rating V V A A A A A W C /W C C Unit Avalanche current IAP Note3 Channel dissipation Pch Note2 Channel to case thermal impedance ch-c Channel temperature Tch Storage temperature Tstg Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tc = 25C 3. STch = 25C, Tch 150C Rev.2.00, Jun.25.2004, page 2 of 9 H5N2305PF Electrical Characteristics (Ta = 25C) Item Drain to Source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Forward transfer admittance Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Symbol Min V(BR)DSS 230 IDSS IGSS VGS(off) |yfs| RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs -- -- 2.5 22 -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- 38 0.030 5200 690 50 60 130 180 120 105 25 37 0.92 180 1.3 -- 1 0.1 4.0 -- 0.038 -- -- -- -- -- -- -- -- -- -- 1.4 -- -- Max V A A V S pF pF pF ns ns ns ns nC nC nC V ns C Unit Test condition ID = 10 mA, VGS = 0 VDS = 230 V, VGS = 0 VGS = 30 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 17.5A, VDS = 10 VNote4 ID = 17.5A, VGS = 10 VNote4 VDS = 25 V VGS = 0 f = 1 MHz ID = 17.5 A RL = 5.7 VGS = 10 V Rg = 10 VDD = 160 V VGS = 10 V ID = 35 A IF = 35 A, VGS = 0Note4 IF = 35 A, VGS = 0 diF/dt = 100 A/s Gate to drain charge Qgd Body-drain diode forward voltage VDF Body-drain diode reverse recovery trr time Body-drain diode reverse recovery Qrr charge Notes: 4. Pulse test Rev.2.00, Jun.25.2004, page 3 of 9 H5N2305PF Main Characteristics Power vs. Temperature Derating 80 1000 300 Maximum Safe Operation Area Pch (W) ID (A) 60 100 30 10 3 1 0.3 Operation in 0.1 this area is PW 10 Channel Dissipation Drain Current 40 (T DC c= = 10 1m m s( 1 10 s s 0 s sh e o 25 ratio t) C n ) Op 20 limited by RDS(on) 0 50 100 150 Tc (C) 200 Case Temperature 0.03 Ta = 25C 0.01 0.1 0.3 1 3 10 30 100 300 1000 Drain to Source Voltage VDS (V) Typical Output Characteristics 100 10 V 8V 100 Pulse Test 7V 6V 80 Typical Transfer Characteristics V DS = 10 V Pulse Test ID (A) 80 60 5.5 V ID (A) Drain Current 60 Drain Current 40 40 20 VGS = 5 V 0 4 8 12 Drain to Source Voltage 16 20 VDS (V) 20 Tc = 75C 25C -25C 8 10 VGS (V) 0 2 4 6 Gate to Source Voltage Rev.2.00, Jun.25.2004, page 4 of 9 H5N2305PF Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source Saturation Voltage VDS(on) (V) Pulse Test 1.6 Drain to Source on State Resistance RDS(on) () 2 Static Drain to Source on State Resistance vs. Drain Current 0.1 Pulse Test VGS = 10 V,15V 0.05 1.2 I D = 35 A 0.8 17.5 A 0.4 5A 0 12 4 8 Gate to Source Voltage 16 VGS (V) 20 0.02 0.01 1 2 10 20 100 300 Drain Current ID (A) 1000 Static Drain to Source on State Resistance RDS(on) () Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance vs. Temperature 0.1 Pulse Test 0.08 VGS = 10 V ID = 35 A 17.5 A 5A 0.04 Forward Transfer Admittance vs. Drain Current 100 50 20 10 5 2 1 0.5 0.2 0.1 0.1 0.3 1 3 10 V DS = 10 V Pulse Test 30 100 300 1000 ID (A) 75C 25C Tc = -25C 0.06 0.02 0 -25 0 25 50 75 100 125 150 Case Temperature Tc (C) Drain Current Rev.2.00, Jun.25.2004, page 5 of 9 H5N2305PF Body-Drain Diode Reverse Recovery Time 10000 5000 1000 Reverse Recovery Time trr (ns) Typical Capacitance vs. Drain to Source Voltage Ciss 500 Capacitance C (pF) 2000 1000 500 200 100 50 200 100 50 Coss Crss VGS = 0 f = 1 MHz 0 100 150 50 Drain to Source Voltage VDS (V) 20 10 0.1 0.3 1 3 10 30 100 300 100 Reverse Drain Current IDR (A) di / dt = 100 A / s V GS = 0, Ta = 25C 20 10 Dynamic Input Characteristics VDS (V) VGS 12 300 Switching Time t (ns) Gate to Source Voltage Drain to Source Voltage V DS = 160 V 100 V 50 V VGS (V) 400 I D = 35 A 16 10000 Switching Characteristics V GS = 10 V, V DD = 100 V PW = 5 s, duty 1% R G = 10 1000 tf t d(off) tr 200 VDD 8 100 t d(on) tr 10 0.1 0.3 1 3 10 30 100 300 1000 Drain Current ID (A) 100 V DS = 160 V 100 V 50 V 40 80 120 160 4 0 0 200 Gate Charge Qg (nC) Rev.2.00, Jun.25.2004, page 6 of 9 H5N2305PF Reverse Drain Current vs. Source to Drain Voltage 100 IDR (A) Gate to Source Cutoff Voltage VGS(off) (V) Gate to Source Cutoff Voltage vs. Case Temperature 5 4 V DS = 10 V I D = 10 mA 1 mA 80 Reverse Drain Current 60 3 2 0.1 mA 40 10 V 5V 20 Pulse Test 0 0.4 0.8 1.2 1.6 VSD (V) 2.0 Source to Drain Voltage V GS = 0 V 1 0 -25 0 25 50 75 100 125 150 Tc (C) Case Temperature Switching Time Test Circuit Vin Monitor D.U.T. RL 10 Vin 10 V V DD = 100 V Vin Vout 10% 10% Vout Monitor Waveform 90% 10% 90% td(off) tf 90% td(on) tr Rev.2.00, Jun.25.2004, page 7 of 9 H5N2305PF Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance s (t) 3 Tc = 25C 1 D=1 0.5 0.2 0.3 0.1 0.1 0.05 0.03 0.01 0.02 0.01 1 tp sho ch - c(t) = s (t) * ch - c ch - c = 2.08C/W, Tc = 25C uls e PDM PW T D= PW T 0.003 0.001 10 100 1m 10 m Pulse Width 100 m PW (s) 1 10 100 Rev.2.00, Jun.25.2004, page 8 of 9 H5N2305PF Package Dimensions As of January, 2003 Unit: mm 5.0 0.3 15.6 0.3 3.2 + 0.4 - 0.2 5.5 0.3 5.0 0.3 19.9 0.3 2.0 0.3 2.7 0.3 0.66 5.45 0.5 + 0.2 - 0.1 21.0 0.5 4.0 0.3 2.6 0.86 3.2 0.3 1.6 0.86 0.2 0.9 + 0.1 - 5.45 0.5 Package Code JEDEC JEITA Mass (reference value) TO-3PFM -- -- 5.2 g Ordering Information Part Name Quantity Shipping Container H5N2305PF-E 30 pcs Plastic magazine Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00, Jun.25.2004, page 9 of 9 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein. RENESAS SALES OFFICES Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500 Fax: <1> (408) 382-7501 Renesas Technology Europe Limited. Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, United Kingdom Tel: <44> (1628) 585 100, Fax: <44> (1628) 585 900 Renesas Technology Europe GmbH Dornacher Str. 3, D-85622 Feldkirchen, Germany Tel: <49> (89) 380 70 0, Fax: <49> (89) 929 30 11 Renesas Technology Hong Kong Ltd. 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2375-6836 Renesas Technology Taiwan Co., Ltd. FL 10, #99, Fu-Hsing N. Rd., Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. 26/F., Ruijin Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1, Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 http://www.renesas.com (c) 2004. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon .1.0 |
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